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| DISCRETE SEMICONDUCTORS DATA SHEET M3D425 BC847F series NPN general purpose transistors Product specification Supersedes data of 2000 Oct 23 2000 Dec 04 Philips Semiconductors Product specification NPN general purpose transistors FEATURES * Low current (max. 100 mA) * Low voltage (max. 65 V). APPLICATIONS * General purpose switching and amplification especially in portable equipment. DESCRIPTION handbook, halfpage BC847F series PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 MAM410 NPN general purpose transistor in an SC-89 (SOT490) plastic package. PNP complement: BC857F series. 1 2 MARKING TYPE NUMBER BC847AF BC847BF BC847CF 1E 1F 1G MARKING CODE Fig.1 Top view Simplified outline (SC-89; SOT490) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 CONDITIONS open emitter open base open collector - - - - - - - -65 - -65 MIN. MAX. 50 45 5 100 200 100 250 +150 150 +150 V V V mA mA mA mW C C C UNIT 2000 Dec 04 2 Philips Semiconductors Product specification NPN general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain BC847AF BC847BF BC847CF VBE VCEsat Cc fT F base-emitter voltage collector-emitter saturation voltage collector capacitance transition frequency noise figure IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; note 1 VCB = 10 V; IE = Ie = 0; f = 1 MHz VCE = 5 V; IC = 10 mA; f = 100 MHz IC = 200 A; VCE = 5 V; RS = 2 k; f = 1 kHz; B = 200 Hz CONDITIONS VCB = 30 V; IE = 0 VCB = 30 V; IE = 0; Tj = 150 C VEB = 5 V; IC = 0 IC = 2 mA; VCE = 5 V 110 200 420 580 - - - - 100 - - - - MIN. PARAMETER CONDITIONS BC847F series VALUE 500 UNIT K/W thermal resistance from junction to ambient in free air; note 1 MAX. 15 5 100 220 450 800 700 770 200 400 1.5 - 10 UNIT nA A nA mV mV mV mV pF MHz dB Note 1. Pulse test: tp 300 s; 0.02. 2000 Dec 04 3 Philips Semiconductors Product specification NPN general purpose transistors GRAPHICAL INFORMATION BC847AF MGT723 BC847F series handbook, halfpage 400 handbook, halfpage V hFE (1) 1200 BE (mV) 1000 MGT724 300 800 (1) (2) 200 (2) 600 (3) (3) 400 100 200 0 10-1 1 10 102 I C (mA) 103 0 10-1 VCE = 5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. 1 10 102 I C (mA) 103 VCE = 5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.3 Fig.2 DC current gain; typical values. Base-emitter voltage as a function of collector current; typical values. 103 handbook, halfpage VCEsat (mV) MGT725 handbook, halfpage 1200 VBEsat (mV) 1000 MGT726 (1) 800 (2) 102 (1) (2) (3) 600 (3) 400 200 10 10-1 1 10 102 I C (mA) 103 0 10-1 1 10 102 I C (mA) 103 IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. IC/IB 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2000 Dec 04 4 Philips Semiconductors Product specification NPN general purpose transistors GRAPHICAL INFORMATION BC847BF MGT727 BC847F series handbook, halfpage 600 handbook, halfpage (1) hFE 500 1200 VBE (mV) 1000 MGT728 (1) 400 (2) 800 (2) 300 600 (3) 200 (3) 400 100 200 0 10-1 1 10 102 I C (mA) 103 0 10-2 10-1 1 10 VCE = 5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. VCE = 5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. 102 103 I C (mA) Fig.7 Fig.6 DC current gain; typical values. Base-emitter voltage as a function of collector current; typical values. 104 handbook, halfpage VCEsat (mV) 103 MGT729 handbook, halfpage 1200 VBEsat (mV) 1000 MGT730 (1) 800 (2) 600 (3) 102 (1) 400 (3) (2) 200 10 10-1 1 10 102 I C (mA) 103 0 10-1 1 10 102 I C (mA) 103 IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. IC/IB 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.9 Base-emitter saturation voltage as a function of collector current; typical values. 2000 Dec 04 5 Philips Semiconductors Product specification NPN general purpose transistors GRAPHICAL INFORMATION BC847CF MGT731 BC847F series handbook, halfpage 1200 handbook, halfpage hFE 1000 (1) 1200 VBE (mV) 1000 MGT732 800 (2) 800 (1) (2) 600 600 400 (3) 400 (3) 200 200 0 10-1 1 10 102 I C (mA) 103 0 10-2 10-1 1 10 VCE = 5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. VCE = 5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. 102 103 I C (mA) Fig.10 DC current gain; typical values. Fig.11 Base-emitter voltage as a function of collector current; typical values. 104 handbook, halfpage VCEsat (mV) 103 MGT733 handbook, halfpage V 1200 BEsat (mV) 1000 MGT734 (1) 800 (2) 600 (3) 102 (1) 400 200 (3) (2) 10 10-1 1 10 102 I C (mA) 103 0 10-1 1 10 102 I C (mA) 103 IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. IC/IB 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.12 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.13 Base-emitter saturation voltage as a function of collector current; typical values. 2000 Dec 04 6 Philips Semiconductors Product specification NPN general purpose transistors PACKAGE OUTLINE Plastic surface mounted package; 3 leads BC847F series SOT490 D B E A X HE vMA 3 A 1 e1 e bp 2 wMB Lp detail X c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.8 0.6 bp 0.33 0.23 c 0.2 0.1 D 1.7 1.5 E 0.95 0.75 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.5 0.3 v 0.1 w 0.1 OUTLINE VERSION SOT490 REFERENCES IEC JEDEC EIAJ SC-89 EUROPEAN PROJECTION ISSUE DATE 98-10-23 2000 Dec 04 7 Philips Semiconductors Product specification NPN general purpose transistors DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development DEFINITIONS (1) BC847F series This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Preliminary specification Qualification Product specification Production Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2000 Dec 04 8 Philips Semiconductors Product specification NPN general purpose transistors NOTES BC847F series 2000 Dec 04 9 Philips Semiconductors Product specification NPN general purpose transistors NOTES BC847F series 2000 Dec 04 10 Philips Semiconductors Product specification NPN general purpose transistors NOTES BC847F series 2000 Dec 04 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW, Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. 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Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 3341 299, Fax.+381 11 3342 553 For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2000 Internet: http://www.semiconductors.philips.com SCA 70 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/04/pp12 Date of release: 2000 Dec 04 Document order number: 9397 750 07659 |
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